R6015FNX Просмотр технического описания (PDF) - ROHM Semiconductor

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производитель

R6015FNX

Nch 600V 15A Power MOSFET

ROHM Semiconductor 

R6015FNX

　　Nch 600V 15A Power MOSFET

　　 Datasheet

lOutline

VDSS

RDS(on)(Max.)

ID

PD

600V

0.35Ω

±15A

77W

TO-220FM

　

　

for

　　　　　　

d lFeatures

lInner circuit

1) Low on-resistance.

e 2) Fast switching speed.

d 3) Gate-source voltage (VGSS) guaranteed to

be ±30V.

n s 4) Drive circuits can be simple.

e n 5) Parallel use is easy.

m ig 6) Pb-free lead plating ; RoHS compliant

lPackaging specifications

Packing

Reel size (mm)

s lApplication

m e Switching Power Supply

Tape width (mm)

Type

Basic ordering unit (pcs)

o D Taping code

c Marking

lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)

e w Parameter

Symbol

Value

R e Drain - Source voltage

VDSS

600

TC = 25°C

ID*1

±15

t Continuous drain current

N TC= 100°C

ID*1

±7.3

o Pulsed drain current

IDP*2

±60

NGate - Source voltage

VGSS

±30

Bulk

-

-

500

-

R6015FNX

Unit

V

A

A

A

V

Avalanche current, single pulse

IAS*3

7.5

A

Avalanche energy, single pulse

EAS*3

15

mJ

Avalanche energy, repetitive

EAR*4

3.5

mJ

Power dissipation (Tc = 25°C)

PD

77

W

Junction temperature

Tj

150

℃

Operating junction and storage temperature range

Tstg

-55 to +150

℃

Reverse diode dv/dt

dv/dt

15

V/ns

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　

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