ST333C04CEM2P Просмотр технического описания (PDF) - Vishay Semiconductors
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ST333C04CEM2P Datasheet PDF : 9 Pages
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ST333CPbF Series
Inverter Grade Thyristors Vishay High Power Products
(Hockey PUK Version), 720 A
1E4
1E3
1E2
1E1
500 400 200 100 50 Hz
1000
1500
2000
2500
3000
5000
Snubb er circ uit
Rs = 10 ohms
Cs = 0.47 µF
V D = 80% VDRM
ST333C..C Series
Trap ezoida l p ulse
tp
TC = 40°C
di/ dt = 100A/ µs
Snubb er circ uit
Rs = 10 ohms
Cs = 0.47 µF
V D = 80% V DRM
400 200 100
500
1000
1500
2000
2500
50 Hz
3000
5000
ST333C..C Series
Trap ezoid al pulse
tp
TC = 55°C
di/ d t = 100A/ µs
1E2
1E3
Pulse Basewidth (µs)
1E14E4
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 15 - Frequency Characteristics
1E4
1E3
1E2
tp
1E1
1E1
20 joules per p ulse
10
5
3
2
1
0.5
0.3
0.2
ST333C..C Series
Sinusoid al pulse
ST333C Series
Recta ngula r p ulse
tp
d i/ d t = 50A/ µs
20 joules p er pulse
10
5
3
2
1
0.5
0.4
0.3
0.2
1E2
1E3
1E4
Pulse Basewidth (µs)
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
100
Rec tangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30%rated di/ dt : 10V, 10ohms
10 tr<=1 µs
(a )
(b )
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
1
0.1
0.001
VGD
IGD
0.01
(1) (2) (3) (4)
Device: ST333C..C Series Frequency Limited by PG(AV)
0.1
1
10
100
InstantaneousGate Current (A)
Fig. 17 - Gate Characteristics
Document Number: 94376
Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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