BAV70WT1 Просмотр технического описания (PDF) - ON Semiconductor

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BAV70WT1

Dual Switching Diode Common Cathode

ON Semiconductor 

BAV70WT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Reverse Breakdown Voltage

(I(BR) = 100 mA)

Reverse Voltage Leakage Current (Note 3)

(VR = 70 V)

(VR = 50 V)

Forward Voltage

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 50 mA)

(IF = 150 mA)

V(BR)

IR

VF

70

−

V

−

5.0

mA

−

100

nA

mV

−

715

−

855

−

1000

−

1250

Diode Capacitance

(VR = 0 V, f = 1.0 MHz)

Reverse Recovery Time

(IF = IR = 10 mA, RL = 100 W, IR(REC) = 1.0 mA) (Figure 1)

Forward Recovery Voltage

(IF = 10 mA, tr = 20 ns) (Figure 2)

CD

−

1.5

pF

trr

−

6.0

ns

VRF

−

1.75

V

3. For each individual diode while the second diode is unbiased.

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