HY27SS08561M Просмотр технического описания (PDF) - Hynix Semiconductor

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HY27SS08561M

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory

Hynix Semiconductor 

HY27SS(08/16)561M Series

HY27US(08/16)561M Series

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash

Ready/Busy Signal Electrical Characteristics

Figures 32, 33 and 34 show the electrical characteristics for the Ready/Busy signal. The value required for the resistor

RP can be calculated using the following equation:

where IL is the sum of the input currents of all the devices tied to the Ready/Busy signal. RP max is determined by the

maximum value of tr.

ready Vcc

VOH

VOL

busy

tf

tr

Figure 32. Ready/Busy AC Waveform

Vcc

Device

ibusy

Rp

RB

Open Drain Output

Vss

Figure 34. Ready/Busy Load Circuit

Rev 0.7 / Oct. 2004

38

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