K9K8G08U1M Просмотр технического описания (PDF) - Samsung

Номер в каталоге

Компоненты Описание

производитель

K9K8G08U1M

512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

Samsung 

K9K8G08U1M

K9F4G08U0M

Advance

FLASH MEMORY

System Interface Using CE don’t-care.

For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2,112byte

data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or

audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and serial access

would provide significant savings in power consumption.

Figure 4. Program Operation with CE don’t-care.

CLE

CE

CE don’t-care

WE

ALE

I/Ox

80h Address(5Cycles)

Data Input

Data Input

10h

tCS

tCH

tCEA

CE

CE

tWP

WE

tREA

RE

I/O0~7

out

Figure 5. Read Operation with CE don’t-care.

CLE

CE

RE

ALE

R/B

WE

I/Ox

tR

00h

Address(5Cycle)

30h

CE don’t-care

Data Output(serial access)

17

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