SI1330EDL(2004) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI1330EDL Datasheet PDF : 5 Pages
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Si1330EDL
Vishay Siliconix
New Product
SPECIFICATIONSa (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Symbol
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
Drain-Source On-Resistanceb
rDS(on)
Forward Transconductanceb
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Time
Turn-Off Time
gfs
VSD
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
Test Conditions
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "10 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 55_C
VGS = 10 V, VDS = 7.5 V
VGS = 4.5 V, VDS = 10 V
VGS = 3 V, VDS = 10 V
VGS = 10 V, ID = 0.25 A
VGS = 4.5 V, ID = 0.2 A
VGS = 3 V, ID = 0.025 A
VDS = 10 V, ID = 0.25 A
IS = 0.23 A, VGS = 0 V
VDS = 10 V, VGS = 4.5 V
ID ^ 0.25 A
VDD = 30 V, RL = 150 W
ID ^ 0.2 A, VGEN = 10V
Rg = 10 W
Limits
Min Typ Max Unit
60
V
1
2.0
2.5
"1
1
mA
10
0.5
0.4
A
0.05
1.0
2.5
1.4
3
W
3.0
8
350
mS
0.83
1.2
V
0.4
0.6
0.11
nC
0.15
173
W
3.8
10
4.8
15
ns
12.8
20
9.6
15
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.0
1.0
6V
VGS = 10, 7 V
0.8
5V
0.8
Transfer Characteristics
TJ = −55_C
25_C
0.6
0.6
125_C
0.4
4V
0.4
0.2
0.0
0
3V
1
2
3
4
5
VDS − Drain-to-Source Voltage (V)
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2
0.2
0
0
1
2
3
4
5
VGS − Gate-to-Source Voltage (V)
Document Number: 72861
S-40853—Rev. A, 03-May-04
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