P1N120 Просмотр технического описания (PDF) - STMicroelectronics

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P1N120

N-channel 1200V - 30Ω - 500mA - TO-220 Zener - protected SuperMESH™ Power MOSFET

STMicroelectronics 

STP1N120

N-channel 1200V - 30Ω - 500mA - TO-220

Zener - protected SuperMESH™ Power MOSFET

PRELIMINARY DATA

General features

Type

STP1N120

VDSS

1200V

RDS(on)

ID

< 38Ω 500mA

PW

45W

■ 100% avalanche tested

■ Extremely high dv/dt capability

■ ESD improved capability

■ New high voltage benchmark

■ Gate charge minimized

Description

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established

strip-based PowerMESH™ layout. In addition to

pushing on-resistance significantly down, special

care is taken to ensure a very good dv/dt

capability for the most demanding applications.

Such series complements ST full range of high

voltage Power MOSFETs including revolutionary

MDmesh™ products.

Applications

■ Switching application

3

2

1

TO-220

Internal schematic diagram

Order codes

Part number

STP1N120

Marking

P1N120

Package

TO-220

Packaging

Tube

September 2006

Rev 1

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

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