STB200N4F3(2009) Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание

производитель

STB200N4F3
(Rev.:2009)

N-channel 40 V, 0.0025 Ω, 120 A, D2PAK, TO-220 planar STripFET™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STB200N4F3, STP200N4F3

(TCASE = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS = 0

40

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125 °C

10 µA

100 µA

t(s) IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

±100 nA

c VGS(th) Gate threshold voltage

VDS = VGS, ID = 250 µA

2

4

V

Produ RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID= 60 A

D²PAK

TO-220

0.0025 0.0031 Ω

0.0030 0.0035 Ω

olete Table 5. Dynamic

bs Symbol

Parameter

Test conditions

- O gfs (1)

t(s) Ciss

Coss

uc Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 10 V, ID = 80 A

VDS = 25 V, f = 1 MHz,

VGS = 0

rod Qg Total gate charge

P Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 20 V, ID = 120 A

VGS = 10 V

(see Figure 14)

Obsolete1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min.

-

Typ.

200

Max. Unit

-

S

5100

pF

- 1270 -

pF

37

pF

75

-

23

17

nC

-

nC

nC

4/14

Doc ID 13302 Rev 3

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