TIP127FP Просмотр технического описания (PDF) - STMicroelectronics

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TIP127FP

Complementary power Darlington transistors

STMicroelectronics 

TIP122FP, TIP127FP

2

Electrical characteristics

Electrical characteristics

Note:

Tcase = 25 °C unless otherwise specified.

Table 4. Electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ICEO

Collector cut-off current

(IB = 0)

VCE = 50 V

ICBO

Collector cut-off current

(IB = 0)

VCE = 100 V

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

VCEO(sus)(1)

Collector-emitter

sustaining voltage

(IB = 0)

IC = 30 mA

VCE(sat)(1)

VBE(on)(1)

Collector-emitter

saturation voltage

Base-emitter on voltage

IC = 3 A

IC = 5 A

IC = 3 A

hFE(1)

DC current gain

IC = 0.5 A

IC = 3 A

1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.

100

IB = 12 mA

IB = 20 mA

VCE = 3 V

VCE = 3 V 1000

VCE = 3 V 1000

0.5 mA

0.2 mA

2 mA

V

2

V

4

V

2.5 V

For PNP types voltage and current values are negative.

Doc ID 5309 Rev 5

3/11

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