BDY27 Просмотр технического описания (PDF) - Comset Semiconductors
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BDY27 Datasheet PDF : 4 Pages
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COMSET
SEMICONDUCTORS
BDY26, 183 T2
BDY27, 184 T2
BDY28, 185 T2
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
Value
2
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
VCEO(BR)
ICEO
IEBO
Collector-Emitter
Breakdown Voltage (*)
IC=50 mA, IB=0
Collector-Emitter Cutoff
Current
VCE=180 V
VCE=200 V
VCE=250 V
Emitter-Base Cutoff Current VEB=10 V
BDY26, 183T2
180 -
BDY27, 184T2
200 -
BDY28A, 185T2A 250 -
BDY28B, 185T2B 250 -
BDY28C, 185T2C 220 -
BDY26
--
BDY27
--
BDY28
--
BDY26, 183T2
BDY27, 184T2
BDY28, 185T2
--
-
-
-
V
-
-
1.0 mA
1.0 mA
VCE=250 V
VBE=0 V
BDY26, 183T2
--
Collector-Emitter Cutoff
ICES
Current
VCE=300 V
VBE=0 V
BDY27, 184T2
- - 1.0 mA
VCE=400 V
VBE=0 V
BDY28, 185T2
--
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