VDD311MCTA Просмотр технического описания (PDF) - AnaSem Semiconductors

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VDD311MCTA

Low voltage, Low power, ±1% High detect accuracy CMOS Voltage Detector with Delay circuit

AnaSem Semiconductors 

Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector

Rev. E13-01

VDD Series

TEST CIRCUITS

Circuit (1) – Operating voltage, Detection voltage, Hysteresis range, Detection voltage temperature coefficient

VIN

V

VIN

VOUT

VSS

R 100KΩ *1)

V

Note 1) :

The resistor (100KΩ) is not necessary for CMOS output products.

Circuit (2) – Current consumption

A

VIN

VIN

VOUT

VSS

Circuit (3) – N-ch driver output current

VIN

VIN

VOUT

A

VSS

VDS

Circuit (4) – P-ch driver output current

VIN

VDS

VIN

VOUT

A

VSS

Circuit (5) – Delay time (VREL→VOUT inversion)

VIN

R 100KΩ *1)

VOUT

VSS

Measurement

of wave form

Note 1) :

The resistor (100KΩ) is not necessary for CMOS output

products.

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