2SK1517 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SK1517

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1517, 2SK1518

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

2SK1517

2SK1518

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Note 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at TC = 25°C

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

IDR

Pch*2

Tch

Tstg

Ratings

Unit

450

V

500

±30

V

20

A

80

A

20

A

120

W

150

°C

–55 to +150

°C

2

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