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2SK2788 Просмотр технического описания (PDF) - Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SK2788
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
2SK2788 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
2SK2788
Reverse Drain Current vs.
Source to Drain Voltage
10
8
6
10 V
4
5V
V
GS
= 0, –5 V
2
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V
SD
(V)
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R
L
Vin
10 V
50
Ω
V
DD
= 30 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
90%
tr
td(off)
tf
Rev.2.00 Sep. 07, 2005 page 5 of 6
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