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PBSS5330PAS

30 V, 3 A PNP low VCEsat (BISS) transistor

NXP Semiconductors. 

PBSS5330PAS

30 V, 3 A PNP low VCEsat (BISS) transistor

11 September 2014

Product data sheet

1. General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra

thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic

package with medium power capability and visible and soldarable side pads.

NPN complement: PBSS4330PAS

2. Features and benefits

• Low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain (hFE) at high IC

• High efficiency due to less heat generation

• High temperature applications up to 175 °C

• Reduced Printed-Circuit Board (PCB) area requirements

• Leadless small SMD plastic package with soldarable side pads

• Exposed heat sink for excellent thermal and electrical conductivity

• Suitable for Automatic Optical Inspection (AOI) of solder joint

• AEC-Q101 qualified

3. Applications

• Loadswitch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)

4. Quick reference data

Table 1.

Symbol

VCEO

IC

ICM

RCEsat

Quick reference data

Parameter

Conditions

collector-emitter

voltage

open base

collector current

peak collector current

collector-emitter

saturation resistance

single pulse; tp ≤ 1 ms

IC = -3 A; IB = -300 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

Min Typ Max Unit

-

-

-30 V

-

-

-3

A

-

-

-5

A

-

75

107 mΩ

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