11N50G-TF3-T Просмотр технического описания (PDF) - Unisonic Technologies
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11N50G-TF3-T Datasheet PDF : 6 Pages
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11N50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
500
V
Gate to Source Voltage
VGSS
±30
V
Continuous Drain Current
TC=25°C
TC=100°C
ID
11 (Note 2)
A
7 (Note 2)
A
Pulsed Drain Current (Note 3)
IDM
44 (Note 2)
A
Single Pulsed Avalanche Energy(Note 4)
EAS
670
mJ
Peak Diode Recovery dv/dt (Note 5)
dv/dt
4.5
V/ns
TO-220
195
TC=25°C
TO-220F1
48
W
TO-220F
Power Dissipation
TO-220
PD
Derate above
TO-220F1
25°C
TO-220F
147
1.56
0.39
W/°C
1.18
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating : Pulse width limited by maximum junction temperature
4. L=10mH, IAS=11A, VDD= 50V, RG=25Ω, Starting TJ=25°C
5. ISD ≤11A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-220F1
TO-220F
SYMBOL
θJA
θJC
RATINGS
62.5
0.64
2.58
0.85
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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