11N50G-TF3-T Просмотр технического описания (PDF) - Unisonic Technologies
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11N50G-TF3-T Datasheet PDF : 6 Pages
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11N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C
Drain-Source Leakage Current
IDSS
VDS=500V, VGS=0V
VDS=500V, TJ=125°C
Gate-Source Leakage Current
ON CHARACTERISTICS
IGSS
VDS=0V ,VGS=±30V
Gate Threshold Voltage
VGS(TH) VDS= VGS, ID=250µA
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=5.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS VDS=25V,VGS=0V,f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
VDS=400V, VGS=10V, ID=11A
(Note 1, 2)
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=250V, ID=11A, RG=3Ω
(Note 1, 2)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =11A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
VGS=0V, IS=11A,
QRR dIF/dt=100A/μs (Note 1)
Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
500
V
0.5
V/°C
10 µA
100 µA
±100 nA
2.0
4.0 V
0.48 0.55 Ω
1515 2055 pF
185 235 pF
25 30 pF
43 55 nC
8
nC
19
nC
24 57 ns
70 150 ns
120 250 ns
75 160 ns
11 A
44 A
1.4 V
90
ns
1.5
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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