1N4448(1999) Просмотр технического описания (PDF) - Vishay Semiconductors

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производитель

1N4448
(Rev.:1999)

Silicon Epitaxial Planar Diodes

Vishay Semiconductors 

1000

100

1 N 4448

10

Scattering Limit

1

0.1

0

94 9171

Tj = 25°C

0.4

0.8

1.2

1.6 2.0

VF – Forward Voltage ( V )

Figure 3. Forward Current vs. Forward Voltage

1N4148.1N4448

Vishay Telefunken

1000

Tj = 25°C

100

Scattering Limit

10

1

1

94 9098

10

100

VR – Reverse Voltage ( V )

Figure 4. Reverse Current vs. Reverse Voltage

Dimensions in mm

technical drawings

according to DIN

specifications

94 9366

∅ 1.7 max.

Standard Glass Case

54 A 2 DIN 41880

JEDEC DO 35

Weight max. 0.3 g

Cathode Identification

26 min.

3.9 max.

∅ 0.55 max.

26 min.

Document Number 85521

Rev. 2, 01-Apr-99

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