2DA2018-7(2010) Просмотр технического описания (PDF) - Diodes Incorporated.
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2DA2018-7 Datasheet PDF : 5 Pages
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2DA2018
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.
Symbol
VCBO
VCEO
VEBO
IC
ICM
Symbol
PD
RθJA
TJ, TSTG
Value
-15
-12
-6
-500
-1
Value
150
833
-55 to +150
Unit
V
V
V
mA
A
Unit
mW
°C/W
°C
160
140
120
100
80
60
40
20 RθJA = 833°C/W
0
0 20 40 60 80 100 120 140 160
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
1
D = 0.7
D = 0.5
D = 0.3
100
80
60
Single Pulse
RθJA(t) = r(t) * RθJA
RθJA = 470°C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
40
20
0
0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
0.1 D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.0001
0.001
D = 0.9
RθJA(t) = r(t) * RθJA
RθJA = 470°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
0.01
0.1
1
10
t1, PULSE DURATION TIME (s)
Fig. 3 Transient Thermal Response
100
1,000
2DA2018
Document number: DS31823 Rev. 3 - 2
2 of 5
www.diodes.com
October 2010
© Diodes Incorporated
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