2N6535 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
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производитель
2N6535 Datasheet PDF : 3 Pages
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Product Specification
Silicon Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-emitter sustaining voltage
VCEsat-1 Collector-emitter saturation voltage
VCEsat-2 Collector-emitter saturation voltage
VBE-1
Base -emitter on voltage
VBE-2
Base -emitter on voltage
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
VF
Diode forward voltage
CONDITIONS
IC=0.2A ; IB=0
IC=3A IB=6mA
IC=8A IB=0.08A
IC=3A ; VCE=3V
IC=8A ; VCE=3V
VCB=100V IE=0
VCE=100V IB=0
VEB=5V; IC=0
IC=3A ; VCE=3V
IC=8A ; VCE=3V
IF=5A
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2N6535
MIN
TYP.
MAX UNIT
100
V
3.0
V
3.0
V
2.8
V
4.5
V
0.5
mA
1.0
mA
5.0
mA
500
10000
100
5000
4.0
V
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