2N7002KTB(2012) Просмотр технического описания (PDF) - PANJIT INTERNATIONAL

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Компоненты Описание

производитель

2N7002KTB
(Rev.:2012)

60V N-Channel Enhancement Mode MOSFET - ESD Protected

PANJIT INTERNATIONAL 

2N7002KTB

ELECTRICAL CHARACTERISTICS

P a ra me te r

S ta ti c

D rain-S ource B reakdown

Voltage

Gate Threshold Voltage

D rain-S ource On-S tate

Re si s ta nc e

D rain-S ource On-S tate

Re si s ta nc e

Zero Gate Voltage Drain

C urrent

Gate Body Leakage

Forward Transconductance

Dynamic

S ymbol

B VDSS

V GS (th)

R DS (on)

R DS (on)

ID SS

IG S S

g

fS

To ta l Ga te C ha r g e

Turn-On D e la y Ti m e

Turn-Off D e la y Ti me

Inp ut C a p a c i ta nce

Output Capacitance

Re ve rs e Tra ns fe r

C a p a c i ta nc e

Source-Drain Diode

Diode Forward Voltage

C onti nuous Di ode F orward

C urrent

P ulsed D iode Forward

C urrent

Qg

t d (on)

td (off)

C iss

C oss

C

rss

V SD

Is

IsM

Te s t C o nd i t i o n

V GS=0 V, ID=1 0 A

V DS=V GS, ID=2 5 0 A

VGS=4.5V, I D=200mA

VGS=10V, I D=500mA

VDS=60V, VGS=0V

VGS=+20V, VDS=0V

V =15V, I =250mA

DS

D

V DS=1 5 V, ID=2 0 0 mA

VGS=4.5V

VDD=30V , RL=150

ID=200mA , VGEN=10V

RG=10

V DS=25V, VGS=0V

f=1.0MHZ

IS=2 0 0 mA , V GS=0 V

-

-

Mi n. Typ . Ma x. Uni ts

60

-

-

V

1

-

2.5

V

-

-

4.0



-

-

3.0

-

-

1

A

-

-

+10

A

100

-

-

mS

-

-

0.8

nC

-

-

20

ns

-

-

125

-

-

35

-

-

10

pF

-

-

5

-

0.82

1.3

V

-

-

115

mA

-

-

800

mA

Switching

VDD

Test Circuit

VIN

RL

Gate Charge

VDD

Test Circuit

VGS

RL

VOUT

RG

1mA

RG

July 20,2012-REV.02

PAGE . 2

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