2PB710AR Просмотр технического описания (PDF) - Philips Electronics
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2PB710AR Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistor
Product specification
2PB710A
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 50 V).
APPLICATIONS
• General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP transistor in an SC-59 plastic package.
NPN complement: 2PD602A.
MARKING
TYPE NUMBER
2PB710AQ
2PB710AR
2PB710AS
MARKING CODE
DQ
DR
DS
handbook, halfpage
3
1
2
Top view
3
1
2
MAM322
Fig.1 Simplified outline (SC-59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−60
−50
−5
−500
−1
−200
250
+150
150
+150
UNIT
V
V
V
mA
A
mA
mW
°C
°C
°C
1999 May 31
2
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