2SA1201 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SA1201 Datasheet PDF : 4 Pages
| |||
IC – VCE
−800
−10
−7
Common emitter
−600
Ta = 25°C
−5
−4
−3
−400
−2
−200
IB = −1 mA
0
0
0
−4
−8
−12
−16
Collector-emitter voltage VCE (V)
2SA1201
1000
500
300
100
50
30
hFE – IC
Ta = 100°C
25
−25
Common emitter
VCE = −5 V
10
−3
−10
−30
−100
−300
−1000
Collector current IC (mA)
−0.5
−0.3
−0.1
−0.05
−0.03
−0.01
−3
VCE (sat) – IC
Common emitter
IC/IB = 10
Ta = 100°C
25
−25
−10
−30
−100
−300
Collector current IC (mA)
−1000
−3000
−1000
Safe Operating Area
IC max (pulse)*
IC max (continuous)
10 ms*
1 ms*
−500
−300
−100
−50
−30
DC
operation
Ta = 25°C
100 ms*
−10 *: Single nonrepetitive pulse
Ta = 25°C
−5 Curves must be derated linearly
−3 with increase in temperature.
Tested without a substrate.
−1
−0.3
−1
−3
−10
VCEO max
−30
−100
Collector-emitter voltage VCE (V)
−300
−0.8
Common emitter
VCE = −5 V
−0.6
IC – VBE
−0.4
Ta = 100°C 25
−25
−0.2
0
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Base-emitter voltage VBE (V)
1.2
(1)
1.0
0.8
PC – Ta
(1) Mounted on a ceramic
substrate (250 mm2 × 0.8 t)
(2) No heat sink
0.6
(2)
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
3
2009-12-21
Share Link: 