2SA1263N Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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производитель

2SA1263N

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A

VBE

Base-emitter on voltage

IC=-3A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-80V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-3A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-5V

Cob

Output capacitance

IE=0 ; VCB=-10V ;f=1MHz

‹ hFE-1 Classifications

R

O

55-110

80-160

Product Specification

2SA1263N

MIN TYP. MAX UNIT

-80

V

-1.0 -2.0

V

-0.95 -1.5

V

-5 μA

-5 μA

55

160

35

30

MHz

290

pF

2

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