2SA1640 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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производитель

2SA1640

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-1mA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ; IC=0

VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.1A

VBEsat Base-emitter saturation voltage

IC=-3A ;IB=-0.1A

ICBO

Collector cut-off current

VCB=-30V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-0.2A ; VCE=-2V

fT

Transition frequency

IC=-0.5A ; VCE=-10V

Product Specification

2SA1640

MIN TYP. MAX UNIT

-30

V

-30

V

-5

V

-0.4

V

-1.0

V

-10 μA

-10 μA

100

300

20

MHz

2

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