2SA1987(2013) Просмотр технического описания (PDF) - Toshiba

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производитель

2SA1987
(Rev.:2013)

TOSHIBA Transistor Silicon PNP Triple Diffused Type

Toshiba 

IC – VCE

−20

Common emitter

Tc = 25°C

−16

−800

−600

−400

−12

−250

−200

−150

−8

−100

IB = −10 mA −50

−40

−4

−30

−20

0

0

−2

−4

−6

−8

−10

Collector-emitter voltage VCE (V)

−3

−1

−0.3

−0.1

−0.03

−0.01

−0.01

VCE (sat) – IC

Tc = 100°C

−25

25

Common emitter

IC/IB = 10

−0.1

−1

−10

−100

Collector current IC (A)

2SA1987

IC – VBE

−20

Common emitter

VCE = −5 V

−16

−12

−8

25

−4

Tc = 100°C

−25

0

0

−0.4

−0.8

−1.2

−1.6

−2.0

Base-emitter voltage VBE (V)

hFE – IC

300

Tc = 100°C

100

25

30

−25

10

3 Common emitter

VCE = −5 V

1

−0.01

−0.1

−1

−10

Collector current IC (A)

−100

Safe Operating Area

−100

IC max (pulsed)*

−30

IC max (continuous)

−10

−3

1 ms*

10 ms*

100 ms*

DC operation

−1

Tc = 25°C

−0.3

−0.1 *: Single nonrepetitive pulse

Tc = 25°C

Curves must be derated

−0.03 linearly with increase in

temperature.

−0.01

−1 −3 −10 −30 −100

VCEO max

−300 −1000

Collector-emitter voltage VCE (V)

3

2013-11-01

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