2SA966 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SA966 Datasheet PDF : 4 Pages
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2SA966
−1600
−1400
−1200
−1000
−800
−600
−400
−200
0
0
IC – VCE
−10
−8
Common emitter
Ta = 25°C
−6
−4
−3
−2
IB = −1 mA
0
−2 −4 −6 −8 −10 −12 −14 −16
Collector-emitter voltage VCE (V)
VCE (sat) – IC
−5
−3 Common emitter
IC/IB = 50
−1
−0.5
−0.3
−0.1
−0.05
−0.03
Ta = 100°C
25
−25
−0.01
−1
−3 −10 −30 −100 −300 −1000 −3000
Collector current IC (mA)
PC – Ta
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160 180
Ambient temperature Ta (°C)
1000
500
300
100
50
30
hFE – IC
Ta = 100°C
−25
25
10
−1 −3 −10 −30 −100 −300 −1000 −3000
Collector current IC (mA)
−1600
−1400
IC – VBE
Common emitter
VCE = −2 V
−1200
−1000
−800
−600
−400
Ta = 100°C 25 −25
−200
0
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8
Base-emitter voltage VBE (V)
Safe Operating Area
−5
IC max (pulsed)*
−3
IC max
(continuous)
100 ms*
10 ms*
1 ms*
−1
1 s*
−0.5
−0.3
DC operation
Ta = 25°C
−0.1
−0.05
−0.03
*: Single nonrepetitive
pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
−0.01
−0.3
−1
−3
VCEO max
−10
−30
Collector-emitter voltage VCE (V)
3
2006-11-09
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