B1009 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

B1009

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A

VBEsat Base-emitter saturation voltage

IC=-2.0A ;IB=-0.2A

ICBO

Collector cut-off current

VCB=-20V; IE=0

IEBO

Emitter cut-off current

VEB=-3V; IC=0

hFE-1

DC current gain

IC=-20mA ; VCE=-5V

hFE-2

DC current gain

IC=-500mA ; VCE=-5V

fT

Transition frequency

IC=-500mA ; VCE=-5V

COB

Collector output capacitance

f=1MHz ; VCB=-10V

Product Specification

2SB1009

MIN TYP. MAX UNIT

-32

V

-0.8

V

-2.0

V

-1

μA

-1

μA

40

82

390

100

MHz

50

pF

2

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