B1094 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

B1094

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1094

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO

Collector-emitter voltage

IC=-30mA; IB=0

-60

V

VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A

-1.5

V

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=-2A ;IB=-0.2A

VCB=-60V; IE=0

VEB=-7V; IC=0

-2.0

V

-10 μA

-10 μA

hFE-1

DC current gain

IC=-50mA ; VCE=-5V

20

hFE-2

DC current gain

IC=-0.5A ; VCE=-5V

40

200

fT

Transition frequency

导体 COB

Collector output capacitance

固I电NC半HANGE SEMICONDUCTOR ‹ hFE-2 Classifications

M

L

K

40-80 60-120 100-200

IC=-0.1A; VCE=-5V

f=1MHz ; VCB=-10V

20

MHz

70

pF

2

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