2SB1103 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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2SB1103

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA, RBE=∞

V(BR)EBO Emitter-base breakdown voltage

IE=-50mA, IC=0

VCEsat-1 Collector-emitter saturation voltage IC=-4A ,IB=-8mA

VCEsat-2 Collector-emitter saturation voltage IC=-8A ,IB=-80mA

VBEsat-1 Base-emitter saturation voltage

IC=-4A ,IB=-8mA

VBEsat-2 Base-emitter saturation voltage

IC=-8A ,IB=-80mA

ICBO

Collector cut-off current

ICEO

Collector cut-off current

VCB=-60V, IE=0

VCE=-50V, RBE=∞

hFE

DC current gain

IC=-4A ; VCE=-3V

VD

Diode forward voltage

ID=8A

Switching times

ton

Turn-on time

tstg

Storage time

IC=-4A ,IB1=-IB2=-8mA

tf

Fall time

Product Specification

2SB1103

MIN TYP. MAX UNIT

-60

V

-7

V

-1.5

V

-3.0

V

-2.0

V

-3.5

V

-100 μA

-10 μA

1000

3.0

V

0.5

μs

3.0

μs

1.0

μs

2

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