2SB1102 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SB1102 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1102
DESCRIPTION
·With TO-220 package
·Complement to type 2SD1602
·DARLINGTON
·High DC current gain
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
固I电NC半H导A体NGE SEMICONDUCTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
Open base
VALUE
-80
-80
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-4
A
ICM
Collector current-peak
-8
A
PC
Collector power dissipation
TC=25℃
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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