2SB1102 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге

Компоненты Описание

производитель

2SB1102

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1102

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0

-80

V

V(BR)EBO Emitter-base breakdown voltage

IE=-50mA ,IC=0

-7

V

VCEsat -1 Collector-emitter saturation voltage IC=-2A; IB=-4mA

-1.5

V

VCEsat -2 Collector-emitter saturation voltage IC=-4A; IB=-40mA

-3.0

V

VBEsat-1 Base-emitter saturation voltage

IC=-2A; IB=-4mA

-2.0

V

VBEsat-2 Base-emitter saturation voltage

IC=-4A; IB=-40mA

-3.5

V

ICBO

Collector cut-off current

VCB=-60V; IE=0

-100 μA

体 ICEO

Collecto cut-off current

固I电NC半H导ANGE SEMICONDUCTOR hFE

DC current gain

VD

Diode forward voltage

Switching times

VCE=-50V; IB=0

IC=-2A ; VCE=-3V

ID=4A;

1000

-10

μA

20000

3.0

V

ton

Turn-on time

0.8

μs

ts

Storage time

IC=-2A IB1=-IB2=-4mA

4.0

μs

tf

Fall time

1.0

μs

2

Share Link: