2SB1151 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SB1151 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1151
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=-2.0A ;IB=-0.2A
-0.3
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=-2.0A ;IB=-0.2A
VCB=-50V; IE=0
VEB=-7V; IC=0
-1.2
V
-10
μA
-10
μA
hFE-1
DC current gain
IC=-0.1A ; VCE=-1V
60
hFE-2
DC current gain
IC=-2A ; VCE=-1V
100
400
hFE-3
DC current gain
IC=-5A ; VCE=-2V
50
Switching times
导体 ton
Turn-on time
固I电NC半HANGE SEMICONDUCTOR tstg
Storage time
tf
Fall time
hFE-2 Classifications
IC=-2A; IB1=-IB2=-0.2A
RL=5.0Ω;VCC≈10V
0.15 1.0
μs
0.78 2.5
μs
0.18 1.0
μs
M
L
K
100-200 160-320 200-400
2
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