2SB1225 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2SB1225

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1225

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=-5mA; IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞

VCEsat Collector-emitter saturation voltage IC=-5A ; IB=-10mA

VBEsat Base-emitter saturation voltage

IC=-5A ; IB=-10mA

ICBO

Collector cut-off current

VCB=-40V;IE=0

IEBO

Emitter cut-off current

VEB=-5V;IC=0

hFE

DC current gain

IC=-5A ; VCE=-2V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=5A; IB1=0.01A

-IB2=0.01A

VCC=20V ,RL=4Ω

MIN TYP. MAX UNIT

-70

V

-60

V

-1.0 -1.5

V

-2.0

V

-0.1

mA

-3.0

mA

2000 5000

0.5

μs

1.5

μs

1.7

μs

2

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