2SB1490 Просмотр технического описания (PDF) - Panasonic Corporation
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2SB1490 Datasheet PDF : 4 Pages
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Power Transistors
2SB1490
Silicon PNP epitaxial planar type darlington
For power amplification
Complementary to 2SD2250
20.0±0.5
φ 3.3±0.2
Unit: mm
5.0±0.3
(3.0)
■ Features
• Optimum for 80 W HiFi output
• High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−160
V
Collector-emitter voltage (Base open) VCEO
−140
V
Emitter-base voltage (Collector open) VEBO
−5
V
Collector current
IC
−7
A
Peak collector current
ICP
−12
A
Collector power dissipation
PC
90
W
Ta = 25°C
3.5
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
(1.5)
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
(1.5)
2.7±0.3
0.6±0.2
123
1: Base
2: Collector
3: Emitter
TOP-3L-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
IEBO
hFE1
hFE2 *
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
IC = −30 mA, IB = 0
VCB = −160 V, IE = 0
VCE = −140 V, IB = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 A
VCE = −5 V, IC = −6 A
IC = −6 A, IB = −6 mA
IC = −6 A, IB = −6 mA
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
IC = −6 A, IB1 = −6 mA, IB2 = 6 mA
VCC = −50 V
−140
2 000
5 000
V
−100 µA
−100 µA
−100 µA
30 000
−2.5
V
−3.0
V
20
MHz
1.0
µs
1.5
µs
1.2
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
5 000 to 15 000 8 000 to 30 000
Publication date: March 2003
SJD00077BED
1
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