2SB1504 Просмотр технического описания (PDF) - Panasonic Corporation

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Компоненты Описание

производитель

2SB1504

Silicon PNP epitaxial planar type darlington

Panasonic Corporation 

2SB1504

PC  Ta

2.0

Without heat sink

1.6

1.2

0.8

0.4

0

0

40

80

120

160

Ambient temperature Ta (°C)

IC  VCE

−8

TC=25˚C

IB=–2.0mA

−6

–1.8mA

–1.6mA

–1.4mA

–1.2mA

–1.0mA

−4

–0.8mA

–0.6mA

–0.4mA

−2

–0.2mA

0

0

−1 −2 −3 −4 −5

Collector-emitter voltage VCE (V)

−100

VCE(sat)  IC

IC/IB=500

−10

25˚C

TC=100˚C

−1

–25˚C

− 0.1

− 0.1

−1

−10

Collector current IC (A)

VBE(sat)  IC

−100

IC/IB=500

−10

TC=–25˚C

25˚C

100˚C

−1

hFE  IC

105

VCE=–3V

TC=100˚C

25˚C

104

–25˚C

103

Cob  VCB

104

IE=0

f=1MHz

TC=25˚C

103

102

10

− 0.1

− 0.1

−1

−10

Collector current IC (A)

102

− 0.1

−1

−10

Collector current IC (A)

1

− 0.1

−1

−10

−100

Collector-base voltage VCB (V)

Safe operation area

−100

Non repetitive pulse

TC=25˚C

ICP

−10

IC

−1

t=1ms

t=10ms

t=300ms

− 0.1

− 0.01

−1

−10

−100

−1 000

Collector-emitter voltage VCE (V)

Rth  t

104

Without heat sink

103

102

10

1

10−1

10−4

10−3

10−2

10−1

1

10

102

103

104

Time t (s)

2

SJD00080BED

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