2SB1457 Просмотр технического описания (PDF) - Toshiba

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производитель

2SB1457

TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington)

Toshiba 

Safe Operating Area

−5

IC max (pulsed)*

−3

100 μs*

−1

−0.5

−0.3

10 ms*

1 ms*

*: Single nonrepetitive pulse

−0.1 Ta = 25°C

−0.05

−0.03

Curves must be derated

linearly with increase in

temperature.

−0.5 −1

−3 −5 −10

VCEO max

−30 −50 −100

Collector-emitter voltage VCE (V)

−300

2SB1457

4

2006-11-21

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