2SB1392 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SB1392

Silicon PNP Triple Diffused

Hitachi -> Renesas Electronics 

Typical Output Characteristics

–5

–80 –70 –60

–50

–4

–40

–30

–3

–20

–2

–10 mA

–1

TC = 25°C

IB = 0

0

–2 –4 –6 –8 –10

Collector to emitter Voltage VCE (V)

2SB1392

1,000

DC Current Transfer Ratio vs.

Collector Current

300

TC = 75°C

25°C

–25°C

100

30

VCE = –4 V

10

–0.1 –0.3

–1.0

–3

–10

Collector current IC (A)

Saturation Voltage vs. Collector Current

–1.0

lC/lB = 10

–0.3

–0.1

–0.03

–25°C

TC = 25°C

25°C

–0.01

–0.1 –0.3

–1.0

–3

–10

Collector current IC (A)

10

3

1.0

0.3

0.1

1m

Transient Thermal Resistance

TC = 25°C

10m

100m

1.0

10

100

1000

3

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