2SB1401 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SB1401

Silicon PNP Triple Diffused

Hitachi -> Renesas Electronics 

2SB1401

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

PC

PC * 1

Tj

Tstg

Ratings

Unit

–300

V

–300

V

–7

V

–0.3

A

–0.6

A

2

W

15

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO –300 —

voltage

Collector to emitter breakdown V(BR)CEO –300 —

voltage

Emitter to base breakdown

V(BR)EBO

–7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

I CBO

I CEO

I EBO

hFE1

hFE2

VCE(sat)

—

—

—

—

—

—

1000 —

1500 —

—

—

Base to emitter saturation

VBE(sat)

—

—

voltage

Note: 1. Pulse test.

Max Unit

—

V

—

V

—

V

–10 µA

–10

–10

—

—

–1.5 V

–2.0 V

Test conditions

IC = –1 mA, IE = 0

IC = –10 mA, RBE = ∞

IE = –1 mA, IC = 0

VCB = –300 V, IE = 0

VCE = –60 V, RBE = ∞

VEB = –5 V, IC = 0

VCE = –1.5 V, IC = –20 mA*1

VCE = –1.5 V, IC = –100 mA*1

IC = –100 mA, IB = –0.2 mA*1

IC = –100 mA, IB = –0.2 mA*1

2

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