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2SB1409 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SB1409
Silicon PNP Epitaxial
Hitachi -> Renesas Electronics
2SB1409 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case Temperature T
C
(
°
C)
Typical Output Characteristics
–1.0
P
C
= 18 W
–0.8
––54–.54
–3.5
–0.6
–3
–2.5
–2
–0.4
–1.5
–1 mA
–0.2
I
B
= 0
T
C
= 25
°
C
0
–10 –20 –30 –40 –50
Collector to emitter Voltage V
CE
(V)
2SB1409(L)/(S)
–10
–3
–1.0
Area of Safe Operation
i
C (peak)
I
C (max)
PW = 10 ms
–0.3
–0.1
–0.03
Ta = 25
°
C
1 Shot Pulse
–0.01
–3
–10 –30
–100 –300
Collector to emitter Voltage V
CE
(V)
1,000
DC Current Transfer Ratio vs.
Collector Current
300
100
30
10
–0.01
V
CE
= –5 V
Ta = 25
°
C
–0.03 –0.1 –0.3
–1.0
Collector current I
C
(A)
3
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