2SB1383 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SB1383

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

2SB1383

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ,IB=B 0

-120

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -12A ,IB= -24mA

VBE(sat) Base-Emitter Saturation Voltage

IC= -12A ,IB= -24mA

ICBO

Collector Cutoff current

VCB= -120V, IE= 0

-1.8

V

-2.5

V

-10 μA

IEBO

Emitter Cutoff current

VEB= -6V, IC= 0

-10 mA

hFE

DC Current Gain

IC= -12A ; VCE= -4V

2000

COB

Output Capacitance

fT

Current-Gain—Bandwidth Product

IE= 0; VCB= -10V; ftest= 1MHz

IE= 1A ; VCE= -12V

230

pF

50

MHz

Switching Times

ton

Turn-On Time

tstg

Storage Time

tf

Fall Time

IC = -12A,IB1 = -IB2= -24mA;

VCC= -24V, RL= 2Ω

1.0

μs

3.0

μs

1.0

μs

isc Website：www.iscsemi.cn

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