2SB1381 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SB1381

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1381

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0

VCEsat-1 Collector-emitter saturation voltage IC=-2.5A; IB=-5mA

VCEsat-2 Collector-emitter saturation voltage IC=-5A; IB=-20mA

VBEsat

Base-emitter saturation voltage

IC=-2.5A; IB=-5mA

ICBO

Collector cut-off current

VCB=-100V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE-1

DC current gain

IC=-2.5A ; VCE=-3V

hFE-2

DC current gain

IC=-7A ; VCE=-3V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IB1=-IB2=-5mA

VCC=-25V ,RL=10?

MIN TYP. MAX UNIT

-100

V

-1.5

V

-3.0

V

-2.5

V

-100

µA

-2.5 mA

1500

15000

500

0.8

µs

2.5

µs

2.0

µs

2

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