2SB1382 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SB1382

Silicon PNP Darlington Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Darlington Power Transistors

Product Specification

2SB1382

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-8 A;IB=-16m A

VBEsat

Base-emitter saturation voltage

IC=-8 A;IB=-16m A

ICBO

Collector cut-off current

VCB=-120V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE

DC current gain

IC=-8A ; VCE=-4V

fT

Transition frequency

IE=1A ; VCE=-12V

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-8A;RL=5A

IB1=-IB2=-16mA

VCC=-40V

MIN TYP. MAX UNIT

-120

V

-1.5

V

-2.5

V

-10

µA

-10

mA

2000

50

MHz

350

pF

0.8

µs

1.8

µs

1.0

µs

2

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