2SB1640 Просмотр технического описания (PDF) - Toshiba
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2SB1640 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1640
Audio Frequency Power Amplifier
2SB1640
Unit: mm
• Low saturation voltage: VCE (sat) = −1.5 V (max)
(IC = −2 A, IB = −0.2 A)
• Collector metal (fin) is covered with mold region.
• Complementary to 2SD2525
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−60
V
Emitter-base voltage
VEBO
−7
V
DC
Collector current
IC
−3
A
Pulse
ICP
−6
Base current
IB
−0.5
A
JEDEC
―
Collector power dissipation
PC
1.8
W
JEITA
―
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-21
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