2SB772-Q-TM3-T Просмотр технического описания (PDF) - Unisonic Technologies

Номер в каталоге

Компоненты Описание

производитель

2SB772-Q-TM3-T

MEDIUM POWER LOW VOLTAGE TRANSISTOR

Unisonic Technologies 

2SB772

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-40

V

Collector-Emitter Voltage

VCEO

-30

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

DC

IC

Pulse

ICP

-3

A

-7

A

Base Current

IB

-0.6

A

TO-92NL

0.5

W

Collector Dissipation (Ta=25℃)

TO-251/TO-252/

PC

TO-126/TO-126C

1

W

Junction Temperature

Storage Temperature

TJ

+150

℃

TSTG

-55 ~ +150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Base Breakdown Voltage

BVCBO

Collector-Emitter Breakdown Voltage BVCEO

Emitter-Base Breakdown Voltage

BVEBO

Collector Cut-Off Current

ICBO

Collector Cut-Off Current

ICEO

Emitter Cut-Off Current

IEBO

DC Current Gain(Note 1)

hFE1

hFE2

Collector-Emitter Saturation Voltage VCE(SAT)

Base-Emitter Saturation Voltage

VBE(SAT)

Current Gain Bandwidth Product

fT

Output Capacitance

Cob

Note 1: Pulse test: PW<300μs, Duty Cycle<2%

IC=-100μA, IE=0

IC=-1mA, IB=0

IE=-100μA, IC=0

VCB=-30V ,IE=0

VCE=-30V ,IB=0

VEB=-3V, IC=0

VCE=-2V, IC=-20mA

VCE=-2V, IC=-1A

IC=-2A, IB=-0.2A

IC=-2A, IB=-0.2A

VCE=-5V, IC=-0.1A

VCB=-10V, IE=0,f=1MHz

„ CLASSIFICATION OF hFE2

RANK

RANGE

Q

100 ~ 200

P

160 ~ 320

MIN TYP MAX UNIT

-40

V

-30

V

-5

V

-1000 nA

-1000 nA

-1000 nA

30 200

100 150 400

-0.3 -0.5

V

-1.0 -2.0

V

80

MHz

45

pF

E

200 ~ 400

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R213-016,E

Share Link: