2SB765 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SB765

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB765

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA, RBE=>

V(BR)EBO Emitter-base breakdown voltage

IE=-50mA ,IC=0

VCEsat-1 Collector-emitter saturation voltage IC=-1.5A ,IB=-3mA

VCEsat-2 Collector-emitter saturation voltage IC=-3A ,IB=-30mA

VBEsat-1 Base-emitter saturation voltage

IC=-1.5A ,IB=-3mA

VBEsat-2 Base-emitter saturation voltage

IC=-3A ,IB=-30mA

ICBO

Collector cut-off current

VCB=-120V, IE=0

ICEO

Collector cut-off current

VCE=-100V; RBE=>

hFE

DC current gain

IC=-1.5A ; VCE=-3V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=-1.5A ;IB1=-IB2=-3mA

MIN TYP. MAX UNIT

-120

V

-7

V

-1.5

V

-3.0

V

-2.0

V

-3.5

V

-100

µA

-10

µA

1000

20000

0.8

µs

3.0

µs

1.5

µs

2

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