2SB947 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SB947 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB947
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
-20
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB=B -0.23A
-0.6 V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= -7A; IB=B -0.23A
VCB= -40V; IE= 0
-1.5 V
-50 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-50 μA
hFE-1
DC Current Gain
IC= -0.1A; VCE= -2V
45
hFE-2
DC Current Gain
IC= -2A; VCE= -2V
90
260
fT
Current-Gain—Bandwidth Product
IC=-0.5A; VCE= -10V; ftest=10MHz
150
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -2A, IB1= -IB2= -66mA
0.1
μs
0.5
μs
0.1
μs
hFE-1 Classifications
Q
P
90-180 130-260
isc Website：www.iscsemi.cn
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