2SC2371 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SC2371

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC2371

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEsat Collector-emitter saturation voltage IC=30mA ;IB=3m A

1.5

V

VBE

Base-emitter on voltage

IC=10mA ; VCE=10V

V(BR)CBO Collector-base breakdown voltage

IC=100μA;IE=0

300

1.2

V

V

V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0

300

V

V(BR)EBO Emitter-base breakdown voltage

IE=100μA; IC=0

6

V

hFE

DC current gain

IC=10mA ; VCE=10V

40

250

ICBO

Collector cut-off current

VCB=200V; IE=0

0.1

μA

固IN电C半H导AN体GE SEMICONDUCTOR IEBO

Emitter cut-off current

COB

Output capacitance

fT

Transition frequency

VEB=4V; IC=0

IE=0; VCB=30V;f=1MHz

IE=10mA ; VCB=30V

0.1

μA

3

pF

50

MHz

2

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