2SC2485 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC2485 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A
VBE
Base-emitter on voltage
IC=4A;VCE=5V
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=3V; IC=0
hFE-1
DC current gain
IC=0.2A ; VCE=5V
hFE-2
DC current gain
IC=1A ; VCE=5V
hFE-3
DC current gain
IC=4A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=5V
hFE-2 Classifications
R
Q
P
40-80
60-120 100-200
Product Specification
2SC2485
MIN TYP. MAX UNIT
100
V
2.0
V
1.8
V
50
μA
50
μA
20
40
200
20
20
MHz
2
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