2SC3149 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC3149 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High breakdown voltage:
VCBO=900V(Min)
·Fast switching speed.
·Wide ASO (Safe Operating Area)
APPLICATIONS
·800V/1.5A switching regulator applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3149
·
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
IB
Base current
PC
Collector dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
900
800
7
1.5
5
0.8
40
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
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