2SC3310 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
2SC3310 Datasheet PDF : 5 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3310
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A
VBEsat Base-emitter saturation voltage
IC=5A ;IB=1A
ICBO
Collector cut-off current
VCB=400V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=3A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
Switching times
Tr
Rise time
ts
Storage time
tf
Fall time
IC=4A ;IB1=-IB2=0.4A
VCC≈200V;RL=10Ω
MIN TYP. MAX UNIT
500
V
400
V
1.0
V
1.5
V
100
μA
1
mA
12
8
1.0
μs
2.5
μs
1.0
μs
2
Share Link: 